Electronic Confinement and Coherence in Patterned Epitaxial Graphene
Ultrathin epitaxial graphite was grown on single-crystal silicon carbide by vacuum graphitization. The material can be patterned using standard nanolithography methods. The tran...
Publications
4 shownUltrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-based Nanoelectronics
We have produced ultrathin epitaxial graphite films which show remarkable 2D\nelectron gas (2DEG) behavior. The films, composed of typically 3 graphene\nsheets, were grown by th...
Why Multilayer Graphene on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>4</mml:mn><mml:mi>H</mml:mi><mml:mtext mathvariant="normal">−</mml:mtext><mml:mi>SiC</mml:mi><mml:mo stretchy="false">(</mml:mo><mml:mn>000</mml:mn><mml:mover accent="true"><mml:mn>1</mml:mn><mml:mo>¯</mml:mo></mml:mover><mml:mo stretchy="false">)</mml:mo></mml:math>Behaves Like a Single Sheet of Graphene
We show experimentally that multilayer graphene grown on the carbon terminated SiC(0001[over ]) surface contains rotational stacking faults related to the epitaxial condition at...
First Direct Observation of a Nearly Ideal Graphene Band Structure
Angle-resolved photoemission and x-ray diffraction experiments show that multilayer epitaxial graphene grown on the SiC(0001) surface is a new form of carbon that is composed of...
Frequent Co-Authors
Researcher Info
- h-index
- 4
- Publications
- 4
- Citations
- 10,144
- Institution
- Centre National de la Recherche Scientifique
External Links
Identifiers
- ORCID
- 0000-0001-5126-1380
Impact Metrics
h-index
4
h-index: Number of publications with at least h citations each.