<i>Ab initio</i> modeling of boron clustering in silicon
We present results of ab initio calculations for the structure and energetics of boron-interstitial clusters in Si and a respective continuum model for the nucleation, growth, a...
Publications
2 shownFirst-Principles Study of Boron Diffusion in Silicon
In this Letter we investigate boron diffusion as a function of the Fermi-level position in crystalline silicon using ab initio calculations. Based on our results, a new mechanis...
Frequent Co-Authors
Researcher Info
- h-index
- 2
- Publications
- 2
- Citations
- 304
- Institution
- Motorola (United States)
External Links
Impact Metrics
h-index
2
h-index: Number of publications with at least h citations each.