Abstract
We report 77-K electroluminescence from an irradiated carbon-rich silicon diode that has an internal quantum efficiency more than 103 times higher than that of band-to-band recombination in an unirradiated, but otherwise identical diode. This is achieved by creating optically active Cs-SiI-Cs complexes with room-temperature electron bombardment at an energy between the displacement thresholds for single vacancy and divacancy formation. Under these irradiation conditions, it is possible to create a high concentration of radiative defects without gross degradation of the diode’s electrical characteristics. The technique could provide very large scale integration-compatible silicon light-emitting diodes for 1.3–1.6 μm all-silicon integrated optics.
Keywords
ElectroluminescenceSiliconDiodeOptoelectronicsMaterials scienceIrradiationLight-emitting diodeSemiconductorQuantum efficiencyElectronVacancy defectChemistryPhysicsNanotechnologyCrystallographyNuclear physics
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Publication Info
- Year
- 1987
- Type
- article
- Volume
- 51
- Issue
- 19
- Pages
- 1509-1511
- Citations
- 72
- Access
- Closed
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Cite This
Leigh Canham,
K.G. Barraclough,
David Robbins
(1987).
1.3-μm light-emitting diode from silicon electron irradiated at its damage threshold.
Applied Physics Letters
, 51
(19)
, 1509-1511.
https://doi.org/10.1063/1.98618
Identifiers
- DOI
- 10.1063/1.98618