Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions

Keywords

Schottky barrierSemiconductorWork functionMaterials sciencevan der Waals forceCondensed matter physicsSchottky diodeFermi levelMetal–semiconductor junctionOptoelectronicsNanotechnologyChemistryElectronPhysicsDiodeMolecule

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Publication Info

Year: 2018
Type: article
Volume: 557
Issue: 7707
Pages: 696-700
Citations: 1934
Access: Closed

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APA Style

                            
                                
                                    Yuan Liu, 
                                
                                    Jian Guo, 
                                
                                    Enbo Zhu
                                
                                et al.
                            
                            (2018). 
                            Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions. 
                            Nature
                            , 557
                            (7707)
                            , 696-700.
                            https://doi.org/10.1038/s41586-018-0129-8
                        

Identifiers

DOI: 10.1038/s41586-018-0129-8