Keywords
Indium antimonideGermaniumSemimetalEffective mass (spring–mass system)Band gapChemistryCondensed matter physicsDirect and indirect band gapsElectronic band structureQuasi Fermi levelCyclotron resonanceImpurityThermal conductionLiquid heliumAtomic physicsHeliumCyclotronPhysicsIonSiliconQuantum mechanics
Affiliated Institutions
Related Publications
Conduction electrons in GaAs: Five-level<i>k⋅p</i>theory and polaron effects
Properties of conduction electrons in GaAs are described theoretically using a five-level k\ensuremath{\cdot}p model, which consistently accounts for inversion asymmetry of the ...
Theory of the Infrared Absorption of Carriers in Germanium and Silicon
The Drude-Zener theory of optical absorption by free carriers is applied to the infrared absorption of $n$-type germanium and $p$-type silicon. Average effective masses so deter...
Electronic structure and thermoelectric properties of bismuth telluride and bismuth selenide
The electronic structures of the two thermoelectric materials and are studied using density-functional theory with the spin - orbit interaction included. The electron states in ...
Radiation Resulting from Recombination of Holes and Electrons in Silicon
Radiation produced by the recombination of excess electrons and holes in silicon has been examined both at room temperature and at 77\ifmmode^\circ\else\textdegree\fi{}K. The ra...
Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors
An empirical nonlocal pseudopotential scheme is employed to calculate the electronic structure of eleven semiconductors: Si, Ge, $\ensuremath{\alpha}\ensuremath{-}\mathrm{Sn}$, ...
Publication Info
- Year
- 1957
- Type
- article
- Volume
- 1
- Issue
- 4
- Pages
- 249-261
- Citations
- 3644
- Access
- Closed
External Links
Social Impact
Altmetric
PlumX Metrics
Social media, news, blog, policy document mentions
Citation Metrics
3644
OpenAlex
Cite This
E. O. Kane
(1957).
Band structure of indium antimonide.
Journal of Physics and Chemistry of Solids
, 1
(4)
, 249-261.
https://doi.org/10.1016/0022-3697(57)90013-6
Identifiers
- DOI
- 10.1016/0022-3697(57)90013-6