A simple yet highly reproducible method to suppress contamination of graphene at low temperature inside the cryostat is presented. The method consists of applying a current of several milliamperes through the graphene device, which is here typically a few microns wide. This ultrahigh current density is shown to remove contamination adsorbed on the surface. This method is well suited for quantum electron transport studies of undoped graphene devices, and its utility is demonstrated here by measuring the anomalous quantum Hall effect.
Devices made from graphene encapsulated in hexagonal boron-nitride exhibit\npronounced negative bend resistance and an anomalous Hall effect, which are a\ndirect consequence of ...
Tunnel Barriers for Graphene Transistors Transistor operation for integrated circuits not only requires that the gate material has high-charge carrier mobility, but that there i...
Patterning of highly oriented pyrolytic graphite (HOPG) was demonstrated by oxygen plasma etching of lithographically patterned substrates. Periodic arrays of islands, or holes ...
Vertical graphene heterostructures made up of graphene layers separated by BN\nspacers allow for novel ways of tuning the interactions between electrons. We\nstudy the possibili...
We report measurements of the photovoltaic effect in diode structures formed with thin films (100 nm) of the conjugated polymer poly(p-phenylene vinylene), PPV, sandwiched betwe...
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