Current saturation in zero-bandgap, top-gated graphene field-effect transistors

Inanc Meric; Melinda Han; Andrea F. Young; Barbaros Özyilmaz; Philip Kim; Kenneth L. Shepard

doi:10.1038/nnano.2008.268

Keywords

GrapheneMaterials scienceTransistorBand gapField-effect transistorSaturation velocityOptoelectronicsVelocity saturationPhononSaturation (graph theory)NanotechnologyCondensed matter physicsVoltageMOSFETPhysics

Affiliated Institutions

Columbia University US

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Publication Info

Year: 2008
Type: article
Volume: 3
Issue: 11
Pages: 654-659
Citations: 1594
Access: Closed

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APA Style

                            
                                
                                    Inanc Meric, 
                                
                                    Melinda Han, 
                                
                                    Andrea F. Young
                                
                                et al.
                            
                            (2008). 
                            Current saturation in zero-bandgap, top-gated graphene field-effect transistors. 
                            Nature Nanotechnology
                            , 3
                            (11)
                            , 654-659.
                            https://doi.org/10.1038/nnano.2008.268
                        

Identifiers

DOI: 10.1038/nnano.2008.268