Abstract
We present a novel concerted exchange mechanism for the diffusion of substitutional atoms in semiconductors that does not involve any defects. For self-diffusion in Si we show that this mechanism is energetically favorable and is able to account for a number of experimental observations. Implication for the diffusion of substitutional dopants is discussed.
Keywords
DiffusionChemical physicsMaterials scienceDopantMechanism (biology)SemiconductorCondensed matter physicsDopingThermodynamicsChemistryPhysics
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Publication Info
- Year
- 1986
- Type
- article
- Volume
- 57
- Issue
- 18
- Pages
- 2287-2290
- Citations
- 203
- Access
- Closed
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Cite This
K. C. Pandey
(1986).
Diffusion without Vacancies or Interstitials: A New Concerted Exchange Mechanism.
Physical Review Letters
, 57
(18)
, 2287-2290.
https://doi.org/10.1103/physrevlett.57.2287
Identifiers
- DOI
- 10.1103/physrevlett.57.2287
- PMID
- 10033684