Abstract
Thin film devices made with poly[2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene], MEH-PPV, are known to be efficient light-emitting diodes. The same devices, under reverse bias, exhibit excellent sensitivity as photodiodes. Thus the polymer tunnel diode is a dual-function device. For the Ca/MEH-PPV/ITO (indium/tin oxide) layered structure, the external quantum efficiency for electroluminescence is ≊1% photons/electron (forward bias ≳2.5 V). The same device is sensitive as a photodiode: The dc sensitivity (−10 V, reverse bias) is 9×10−2 A/W (at ∼1-μW/cm2 input) corresponding to a quantum yield of more than 20% electrons/photon.
Keywords
OptoelectronicsPhotodiodeElectroluminescenceMaterials scienceDiodeIndium tin oxideLight-emitting diodeQuantum efficiencyQuantum yieldPhotonElectronOpticsThin filmPhysicsFluorescenceNanotechnology
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Publication Info
- Year
- 1994
- Type
- article
- Volume
- 64
- Issue
- 12
- Pages
- 1540-1542
- Citations
- 286
- Access
- Closed
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Cite This
Gang Yu,
C. Zhang,
Alan J. Heeger
(1994).
Dual-function semiconducting polymer devices: Light-emitting and photodetecting diodes.
Applied Physics Letters
, 64
(12)
, 1540-1542.
https://doi.org/10.1063/1.111885
Identifiers
- DOI
- 10.1063/1.111885