Abstract
The free-hole absorption in $p$-type germanium (gallium-doped) is studied as a function of concentration over the range from ${10}^{15}$ to ${10}^{20}$ acceptors/${\mathrm{cm}}^{3}$. The spectra are modified as the carrier and total impurity concentrations are increased. With increasing concentration the structure in the spectrum becomes less pronounced. The effects observed are consistent with changes in the Fermi level and with nonvertical transitions induced by charged impurity centers.
Keywords
GermaniumImpurityDopingAbsorption (acoustics)Absorption spectroscopyGalliumAnalytical Chemistry (journal)PhysicsInfraredInfrared spectroscopyType (biology)Materials scienceCondensed matter physicsChemistryOpticsOptoelectronicsQuantum mechanicsSilicon
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Publication Info
- Year
- 1957
- Type
- article
- Volume
- 105
- Issue
- 3
- Pages
- 885-886
- Citations
- 78
- Access
- Closed
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Cite This
Roger H. Newman,
W. W. Tyler
(1957).
Effect of Impurities on Free-Hole Infrared Absorption in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-Type Germanium.
Physical Review
, 105
(3)
, 885-886.
https://doi.org/10.1103/physrev.105.885
Identifiers
- DOI
- 10.1103/physrev.105.885