Abstract

Semiconducting molybdenum disulfphide has emerged as an attractive material for novel nanoscale optoelectronic devices due to its reduced dimensionality and large direct bandgap. Since optoelectronic devices require electron-hole generation/recombination, it is important to be able to fabricate ambipolar transistors to investigate charge transport both in the conduction band and in the valence band. Although n-type transistor operation for single-layer and few-layer MoS2 with gold source and drain contacts was recently demonstrated, transport in the valence band has been elusive for solid-state devices. Here we show that a multi-layer MoS2 channel can be hole-doped by palladium contacts, yielding MoS2 p-type transistors. When two different materials are used for the source and drain contacts, for example hole-doping Pd and electron-doping Au, the Schottky junctions formed at the MoS2 contacts produce a clear photovoltaic effect.

Keywords

OptoelectronicsMaterials scienceDopingAmbipolar diffusionSchottky barrierBand gapTransistorSchottky diodeElectronNanotechnologyDiodeElectrical engineeringPhysicsVoltage

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Publication Info

Year
2013
Type
article
Volume
3
Issue
1
Pages
1634-1634
Citations
503
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Márcio Fontana, Tristan Deppe, Anthony K. Boyd et al. (2013). Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions. Scientific Reports , 3 (1) , 1634-1634. https://doi.org/10.1038/srep01634

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DOI
10.1038/srep01634