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Yield (engineering)ExcitationDesorptionChemistryAtomic physicsAtom (system on chip)ElectronElectronic structureCrystallographySurface (topology)Molecular physicsMaterials scienceAdsorptionComputational chemistryPhysical chemistryPhysics
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Publication Info
- Year
- 2000
- Type
- article
- Volume
- 446
- Issue
- 3
- Pages
- 211-218
- Citations
- 17
- Access
- Closed
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Cite This
T. C. Shen,
Janice A. Steckel,
Kenneth D. Jordan
(2000).
Electron-stimulated bond rearrangements on the H/Si(100)-3×1 surface.
Surface Science
, 446
(3)
, 211-218.
https://doi.org/10.1016/s0039-6028(99)01147-4
Identifiers
- DOI
- 10.1016/s0039-6028(99)01147-4