Electronic Transport and Quantum Hall Effect in Bipolar Graphene<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi><mml:mtext mathvariant="normal">−</mml:mtext><mml:mi>n</mml:mi><mml:mtext mathvariant="normal">−</mml:mtext><mml:mi>p</mml:mi></mml:math>Junctions

2007 Physical Review Letters 462 citations

Abstract

We have developed a device fabrication process to pattern graphene into nanostructures of arbitrary shape and control their electronic properties using local electrostatic gates. Electronic transport measurements have been used to characterize locally gated bipolar graphene $p$-$n$-$p$ junctions. We observe a series of fractional quantum Hall conductance plateaus at high magnetic fields as the local charge density is varied in the $p$ and $n$ regions. These fractional plateaus, originating from chiral edge states equilibration at the $p$-$n$ interfaces, exhibit sensitivity to inter-edge backscattering which is found to be strong for some of the plateuas and much weaker for other plateaus. We use this effect to explore the role of backscattering and estimate disorder strength in our graphene devices.

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PhysicsComputer science

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Publication Info

Year
2007
Type
article
Volume
99
Issue
16
Citations
462
Access
Closed

Citation Metrics

462
OpenAlex
4
Influential
441
CrossRef

Cite This

Barbaros Özyilmaz, Pablo Jarillo‐Herrero, Dmitri K. Efetov et al. (2007). Electronic Transport and Quantum Hall Effect in Bipolar Graphene<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi><mml:mtext mathvariant="normal">−</mml:mtext><mml:mi>n</mml:mi><mml:mtext mathvariant="normal">−</mml:mtext><mml:mi>p</mml:mi></mml:math>Junctions. Physical Review Letters , 99 (16) . https://doi.org/10.1103/physrevlett.99.166804

Identifiers

DOI
10.1103/physrevlett.99.166804
PMID
17995279
arXiv
0705.3044

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Data completeness: 84%