Abstract

We report on electronic properties of graphene synthesized by chemical vapor deposition (CVD) on copper then transferred to SiO2/Si. Wafer-scale (up to 4 in.) graphene films have been synthesized, consisting dominantly of monolayer graphene as indicated by spectroscopic Raman mapping. Low temperature transport measurements are performed on microdevices fabricated from such CVD graphene, displaying ambipolar field effect (with on/off ratio ∼5 and carrier mobilities up to ∼3000 cm2/V s) and “half-integer” quantum Hall effect, a hall-mark of intrinsic electronic properties of monolayer graphene. We also observe weak localization and extract information about phase coherence and scattering of carriers.

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Publication Info

Year
2010
Type
article
Volume
96
Issue
12
Citations
161
Access
Closed

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Helin Cao, Qingkai Yu, J. Tian et al. (2010). Electronic transport in chemical vapor deposited graphene synthesized on Cu: Quantum Hall effect and weak localization. Applied Physics Letters , 96 (12) . https://doi.org/10.1063/1.3371684

Identifiers

DOI
10.1063/1.3371684
arXiv
0910.4329

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