Abstract

Novel physical phenomena can emerge in low-dimensional nanomaterials. Bulk MoS(2), a prototypical metal dichalcogenide, is an indirect bandgap semiconductor with negligible photoluminescence. When the MoS(2) crystal is thinned to monolayer, however, a strong photoluminescence emerges, indicating an indirect to direct bandgap transition in this d-electron system. This observation shows that quantum confinement in layered d-electron materials like MoS(2) provides new opportunities for engineering the electronic structure of matter at the nanoscale.

Keywords

PhotoluminescenceMonolayerMaterials scienceNanomaterialsBand gapSemiconductorNanotechnologyDirect and indirect band gapsQuantum dotNanoscopic scaleOptoelectronicsCondensed matter physicsPhysics

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Publication Info

Year
2010
Type
article
Volume
10
Issue
4
Pages
1271-1275
Citations
9023
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Andrea Splendiani, L. Sun, Yuanbo Zhang et al. (2010). Emerging Photoluminescence in Monolayer MoS<sub>2</sub>. Nano Letters , 10 (4) , 1271-1275. https://doi.org/10.1021/nl903868w

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DOI
10.1021/nl903868w