Abstract

A new GaAs-based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy. The lattice constant of (Ga,Mn)As films was determined by x-ray diffraction and shown to increase with the increase of Mn composition, x. Well-aligned in-plane ferromagnetic order was observed by magnetization measurements. Magnetotransport measurements revealed the occurrence of anomalous Hall effect in the (Ga,Mn)As layer.

Keywords

Magnetic semiconductorFerromagnetismMolecular beam epitaxyLattice constantMaterials scienceCondensed matter physicsMagnetizationHall effectDiffractionGallium arsenideSemiconductorEpitaxyLayer (electronics)Magnetic fieldOptoelectronicsNanotechnologyPhysicsOptics

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Publication Info

Year
1996
Type
article
Volume
69
Issue
3
Pages
363-365
Citations
2300
Access
Closed

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Cite This

Hiroshi Ohno, Aidong Shen, F. Matsukura et al. (1996). (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs. Applied Physics Letters , 69 (3) , 363-365. https://doi.org/10.1063/1.118061

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DOI
10.1063/1.118061

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Data completeness: 77%