Gate-induced insulating state in bilayer graphene devices

Jeroen B. Oostinga; H. B. Heersche; Xinglan Liu; Alberto F. Morpurgo; Lieven M. K. Vandersypen

doi:10.1038/nmat2082

Keywords

Materials scienceBilayer grapheneGrapheneOptoelectronicsElectric fieldField-effect transistorBand gapTransistorThermal conductionBilayerCondensed matter physicsElectronicsElectrodeNanotechnologyElectrical engineeringVoltageMembraneComposite materialChemistry

Affiliated Institutions

Delft University of Technology NL

Related Publications

Controlling the Electronic Structure of Bilayer Graphene

Taisuke Ohta , Aaron Bostwick , Thomas Seyller +2 more

We describe the synthesis of bilayer graphene thin films deposited on insulating silicon carbide and report the characterization of their electronic band structure using angle-r...

2006 Science 3276 citations

van der Waals Heterostructures with High Accuracy Rotational Alignment

Kyounghwan Kim , Matthew Yankowitz , Babak Fallahazad +10 more

We describe the realization of van der Waals (vdW) heterostructures with accurate rotational alignment of individual layer crystal axes. We illustrate the approach by demonstrat...

2016 Nano Letters 657 citations

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

L. Britnell , Roman Gorbachev , R. Jalil +12 more

Tunnel Barriers for Graphene Transistors Transistor operation for integrated circuits not only requires that the gate material has high-charge carrier mobility, but that there i...

2012 Science 2509 citations

Asymmetry gap in the electronic band structure of bilayer graphene

Edward McCann

A tight binding model is used to calculate the band structure of bilayer\ngraphene in the presence of a potential difference between the layers that\nopens a gap $\\Delta$ betwe...

2006 Physical Review B 1243 citations

Mobility engineering and a metal–insulator transition in monolayer MoS2

Branimir Radisavljevic , András Kis

Two-dimensional (2D) materials are a new class of materials with interesting physical properties and applications ranging from nanoelectronics to sensing and photonics. In addit...

2013 Nature Materials 1745 citations

Publication Info

Year: 2007
Type: article
Volume: 7
Issue: 2
Pages: 151-157
Citations: 1643
Access: Closed

External Links

View on DOI.org

Social Impact

Altmetric

Gate-induced insulating state in bilayer graphene devices

PlumX Metrics

Social media, news, blog, policy document mentions

Citation Metrics

1643

OpenAlex

Cite This

APA Style

                            
                                
                                    Jeroen B. Oostinga, 
                                
                                    H. B. Heersche, 
                                
                                    Xinglan Liu
                                
                                et al.
                            
                            (2007). 
                            Gate-induced insulating state in bilayer graphene devices. 
                            Nature Materials
                            , 7
                            (2)
                            , 151-157.
                            https://doi.org/10.1038/nmat2082
                        

Identifiers

DOI: 10.1038/nmat2082