Abstract

We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our measurements show that mobilities higher than 200 000 cm2/V s are achievable, if extrinsic disorder is eliminated. A sharp (thresholdlike) increase in resistivity observed above approximately 200 K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intraripple flexural phonons.

Keywords

GrapheneCondensed matter physicsBilayer grapheneMaterials scienceScatteringPhononElectronCharge carrierElectron mobilityCarrier scatteringBilayerPhysicsNanotechnologyOpticsChemistryQuantum mechanics

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Year
2008
Type
article
Volume
100
Issue
1
Pages
016602-016602
Citations
3370
Access
Closed

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С. В. Морозов, Kostya S. Novoselov, M. I. Katsnelson et al. (2008). Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer. Physical Review Letters , 100 (1) , 016602-016602. https://doi.org/10.1103/physrevlett.100.016602

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DOI
10.1103/physrevlett.100.016602