Abstract

Abstract In this paper we investigate the properties of indentation hardness on the sub-micrometre scale in nickel, gold and silicon. Indenter penetration depths as low as 20 nm are used. The area of the indents is determined by electron microscopy, and thus the Meyer hardness calculated. The indenter penetration is monitored continuously during loading and unloading. We show that indent areas, and therefore hardness, may be determined from penetration depth with reasonable accuracy, and that elastic relaxation can be quantitatively understood. We discuss the marked increase of indentation hardness with decreasing indent size on the sub-micrometre scale. Small indents in silicon showed no evidence of cracking, but did show unusual deformation characteristics.

Keywords

IndentationMaterials sciencePenetration depthPenetration (warfare)SiliconIndentation hardnessComposite materialNanoindentationCrackingOpticsMetallurgyMicrostructure

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Publication Info

Year
1983
Type
article
Volume
48
Issue
4
Pages
593-606
Citations
922
Access
Closed

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J. B. Pethicai, R. Hutchings, W. C. Oliver (1983). Hardness measurement at penetration depths as small as 20 nm. Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties , 48 (4) , 593-606. https://doi.org/10.1080/01418618308234914

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DOI
10.1080/01418618308234914