Abstract

The performance of solid-state dye-sensitized solar cells based on spiro-MeOTAD was considerably improved by controlling charge recombination across the interface of the heterojunction. This was achieved by blending the hole conductor matrix with a combination of 4-tert-butylpyridine (tBP) and Li[CF3SO2]2N. Open circuit voltages Uoc over 900 mV and short circuit currents Isc up to 5.1 mA were obtained, yielding an overall efficiency of 2.56% at AM1.5 illumination. These values have been fully confirmed at the National Renewable Energy Laboratories for a device with an active area of 1.07 cm2, signifying a dramatic improvement compared to previously reported values for a similar device.

Keywords

Materials scienceOpen-circuit voltagePhotovoltaic systemHeterojunctionOptoelectronicsRenewable energyVoltageEnergy conversion efficiencyRecombinationCharge carrierConductorSolid-stateCharge (physics)Electrical engineeringChemistryPhysicsPhysical chemistryComposite material

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Publication Info

Year
2001
Type
article
Volume
79
Issue
13
Pages
2085-2087
Citations
510
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Jessica Krüger, Robert Plass, Le Cevey et al. (2001). High efficiency solid-state photovoltaic device due to inhibition of interface charge recombination. Applied Physics Letters , 79 (13) , 2085-2087. https://doi.org/10.1063/1.1406148

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DOI
10.1063/1.1406148