Large-Scale Ni-Doped ZnO Nanowire Arrays and Electrical and Optical Properties

Abstract

Large-scale Ni-doped ZnO nanowire (NW) arrays are grown. The electrical conductivity of a single Ni-doped ZnO NW has been increased for 30 times. The photoluminescence (PL) spectrum of the doped ZnO NWs has a red shift, suggesting possible doping induced band edge bending. The doped NW arrays could be the basis for building integrated nanoscale transistors, sensors, and photodetectors.

Keywords

DopingNanowirePhotoluminescenceOptoelectronicsNanoscopic scalePhotodetectorChemistryEnhanced Data Rates for GSM EvolutionElectrical resistivity and conductivityNanotechnologyMaterials scienceTelecommunicationsElectrical engineering

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Publication Info

Year: 2005
Type: article
Volume: 127
Issue: 47
Pages: 16376-16377
Citations: 241
Access: Closed

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APA Style

                            
                                
                                    Jr‐Hau He, 
                                
                                    Chang Shi Lao, 
                                
                                    Lih J. Chen
                                
                                et al.
                            
                            (2005). 
                            Large-Scale Ni-Doped ZnO Nanowire Arrays and Electrical and Optical Properties. 
                            Journal of the American Chemical Society
                            , 127
                            (47)
                            , 16376-16377.
                            https://doi.org/10.1021/ja0559193
                        

Identifiers

DOI: 10.1021/ja0559193
PMID: 16305207

Data Quality

Data completeness: 81%