Abstract
Local structures around Mn in ${\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}\mathrm{As}$ ($x=0.005$ and 0.074) films have been studied using Mn $K$-edge extended x-ray-absorption fine structure. In the ${\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}\mathrm{As}$ films, Mn atoms are substituted into the Ga sites in the zinc-blende-type GaAs lattice. The Mn-As bond length (2.49--2.50 \AA{}) in ${\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}\mathrm{As}$ is 2--3 % larger than the Ga-As bond length (2.44 \AA{}) in bulk GaAs. The longer Mn-As bonds cause local disorder in the GaAs lattice, the degree of which increases with the Mn composition.
Keywords
CrystallographyLattice (music)Bond lengthMaterials scienceMagnetic semiconductorCondensed matter physicsPhysicsChemical bondCrystal structureDopingChemistryQuantum mechanics
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Publication Info
- Year
- 1998
- Type
- article
- Volume
- 58
- Issue
- 3
- Pages
- 1100-1102
- Citations
- 113
- Access
- Closed
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Cite This
R. Shioda,
Koji Ando,
T. Hayashi
et al.
(1998).
Local structures of III-V diluted magnetic semiconductors<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Mn</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">As</mml:mi></mml:math>studied using extended x-ray-absorption fine structure.
Physical review. B, Condensed matter
, 58
(3)
, 1100-1102.
https://doi.org/10.1103/physrevb.58.1100
Identifiers
- DOI
- 10.1103/physrevb.58.1100