Abstract

We demonstrate logic circuits with field-effect transistors based on single carbon nanotubes. Our device layout features local gates that provide excellent capacitive coupling between the gate and nanotube, enabling strong electrostatic doping of the nanotube from p -doping to n -doping and the study of the nonconventional long-range screening of charge along the one-dimensional nanotubes. The transistors show favorable device characteristics such as high gain (>10), a large on-off ratio (>10 5 ), and room-temperature operation. Importantly, the local-gate layout allows for integration of multiple devices on a single chip. Indeed, we demonstrate one-, two-, and three-transistor circuits that exhibit a range of digital logic operations, such as an inverter, a logic NOR, a static random-access memory cell, and an ac ring oscillator.

Keywords

Carbon nanotube field-effect transistorTransistorCarbon nanotubeLogic gateMaterials scienceElectronic circuitPass transistor logicNanotechnologyField-effect transistorDigital electronicsCapacitive couplingOptoelectronicsInverterElectrical engineeringVoltageEngineering

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Publication Info

Year
2001
Type
article
Volume
294
Issue
5545
Pages
1317-1320
Citations
2606
Access
Closed

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Cite This

Adrian Bachtold, P. Hadley, Takeshi Nakanishi et al. (2001). Logic Circuits with Carbon Nanotube Transistors. Science , 294 (5545) , 1317-1320. https://doi.org/10.1126/science.1065824

Identifiers

DOI
10.1126/science.1065824
PMID
11588220

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Data completeness: 81%