Abstract
We have studied growth condition dependence of magnetic and transport properties of magnetic semiconductor (GaMn)As grown by low-temperature molecular-beam epitaxy (LT-MBE). With increasing substrate temperature and decreasing As overpressure during the growth of (Ga1−xMnx)As with x=0.043, the hole concentration increased, the conduction behavior changed from semiconducting to metallic, and the ferromagnetic transition temperature became higher. This is explained by a decrease in the compensation of Mn acceptors by the reduction of excess As related defects in the LT-MBE grown (GaMn)As. Our experimental results indicate that the selection of the MBE growth parameters is very important for better controlling the electronic and magnetic properties of (GaMn)As.
Keywords
Molecular beam epitaxyFerromagnetismMagnetic semiconductorCondensed matter physicsMaterials scienceSubstrate (aquarium)SemiconductorThermal conductionEpitaxyOptoelectronicsNanotechnologyPhysicsLayer (electronics)
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Publication Info
- Year
- 1999
- Type
- article
- Volume
- 74
- Issue
- 3
- Pages
- 398-400
- Citations
- 116
- Access
- Closed
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Cite This
Hiromasa Shimizu,
T. Hayashi,
Tatau Nishinaga
et al.
(1999).
Magnetic and transport properties of III–V based magnetic semiconductor (GaMn)As: Growth condition dependence.
Applied Physics Letters
, 74
(3)
, 398-400.
https://doi.org/10.1063/1.123082
Identifiers
- DOI
- 10.1063/1.123082