Magnetotransport properties ofp-type (In,Mn)As diluted magnetic III-V semiconductors

Abstract

Magnetotransport properties of p-type (In,Mn)As, a new diluted magnetic semiconductor based on a III-V semiconductor, are studied. The interaction between the holes and the Mn 3d spins is manifested in the anomalous Hall effect, which dominates the Hall resistivity from low temperature (0.4 K) to nearly room temperature, and in the formation of partial ferromagnetic order below 7.5 K, which is a cooperative phenomenon related to carrier localization. The coexistence of remanent magnetization and unsaturated spins as well as the large negative magnetoresistance at low temperatures is explained by the formation of large bound magnetic polarons.

Keywords

Condensed matter physicsMagnetoresistanceSpinsFerromagnetismPolaronMagnetic semiconductorMaterials scienceMagnetizationHall effectSemiconductorElectrical resistivity and conductivityElectronMagnetic fieldPhysics

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Publication Info

Year: 1992
Type: article
Volume: 68
Issue: 17
Pages: 2664-2667
Citations: 1074
Access: Closed

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APA Style

                            
                                
                                    Hideo Ohno, 
                                
                                    H. Munekata, 
                                
                                    T. Penney
                                
                                et al.
                            
                            (1992). 
                            Magnetotransport properties of<i>p</i>-type (In,Mn)As diluted magnetic III-V semiconductors. 
                            Physical Review Letters
                            , 68
                            (17)
                            , 2664-2667.
                            https://doi.org/10.1103/physrevlett.68.2664
                        

Identifiers

DOI: 10.1103/physrevlett.68.2664
PMID: 10045456

Data Quality

Data completeness: 77%