Abstract
Complete statistical randomization of the direction of propagation of light trapped in semiconductor films can result in a large absorption enhancement. We have employed a calorimetric technique, photothermal deflection spectroscopy, to monitor the absorption of alpha-SiH(x) films textured by the natural lithography process. The observed enhancement factors, as high as 11.5, are consistent with full internal phase-space randomization of the incoming light.
Keywords
OpticsMaterials scienceSemiconductorPhotothermal therapyLithographyAbsorption (acoustics)Photothermal spectroscopyOptoelectronicsSpectroscopyPhysics
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Publication Info
- Year
- 1983
- Type
- article
- Volume
- 8
- Issue
- 9
- Pages
- 491-491
- Citations
- 101
- Access
- Closed
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Cite This
H. W. Deckman,
C. B. Roxlo,
Eli Yablonovitch
(1983).
Maximum statistical increase of optical absorption in textured semiconductor films.
Optics Letters
, 8
(9)
, 491-491.
https://doi.org/10.1364/ol.8.000491
Identifiers
- DOI
- 10.1364/ol.8.000491