Abstract

Electrically induced electron-spin polarization near the edges of a semiconductor channel was detected and imaged with the use of Kerr rotation microscopy. The polarization is out-of-plane and has opposite sign for the two edges, consistent with the predictions of the spin Hall effect. Measurements of unstrained gallium arsenide and strained indium gallium arsenide samples reveal that strain modifies spin accumulation at zero magnetic field. A weak dependence on crystal orientation for the strained samples suggests that the mechanism is the extrinsic spin Hall effect.

Keywords

Condensed matter physicsGallium arsenideHall effectSpin polarizationSpin Hall effectSemiconductorPolarization (electrochemistry)Indium arsenideSpin (aerodynamics)Magnetic fieldMaterials scienceThermal Hall effectElectronPhysicsChemistryOptoelectronics

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Publication Info

Year
2004
Type
article
Volume
306
Issue
5703
Pages
1910-1913
Citations
2537
Access
Closed

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Yuichiro K. Kato, Roberto C. Myers, A. C. Gossard et al. (2004). Observation of the Spin Hall Effect in Semiconductors. Science , 306 (5703) , 1910-1913. https://doi.org/10.1126/science.1105514

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DOI
10.1126/science.1105514