Abstract
The two-dimensional plasmon of an $n$ inversion layer of (100) $p$-type Si is observed at a fixed wave vector as a function of electron density. The position, width, and strength of the resonance agree with existing theory at electron densities \ensuremath{\gtrsim}${10}^{12}$/${\mathrm{cm}}^{2}$. At lower densities, the resonance position is below the predicted value, implying a substantial increase in the electron mass.
Keywords
Related Publications
Adsorption of Cu and Ag atoms on Si(111) surfaces: Local density functional determination of geometries and electronic structures
The electronic structures, adsorption geometries, chemisorption energies, and vibrational frequencies of single Cu and Ag atoms on Si(111) surfaces are determined by self-consis...
Kohn-Sham potentials and exchange and correlation energy densities from one- and two-electron density matrices for<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Li</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mo>,</mml:mo></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">N</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mo>,</mml:mo></mml:math>and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">F</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
A definition of key quantities of the Kohn-Sham form of density-functional theory such as the exchange-correlation potential ${v}_{\mathrm{xc}}$ and the energy density ${\ensure...
F center in sodium electrosodalite as a physical manifestation of a non-nuclear attractor in the electron density
The structure of sodium electrosodalite (SES), ${\mathrm{Na}}_{8}({\mathrm{AlSiO}}_{4}{)}_{6},$ has been determined at 20 K using synchrotron powder diffraction. Subsequently th...
Theory of the Infrared Absorption of Carriers in Germanium and Silicon
The Drude-Zener theory of optical absorption by free carriers is applied to the infrared absorption of $n$-type germanium and $p$-type silicon. Average effective masses so deter...
Continuous-time random-walk model of electron transport in nanocrystalline<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">TiO</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>electrodes
Electronic junctions made from porous, nanocrystalline ${\mathrm{TiO}}_{2}$ films in contact with an electrolyte are important for applications such as dye-sensitized solar cell...
Publication Info
- Year
- 1977
- Type
- article
- Volume
- 38
- Issue
- 17
- Pages
- 980-983
- Citations
- 607
- Access
- Closed
External Links
Social Impact
Social media, news, blog, policy document mentions
Citation Metrics
Cite This
Identifiers
- DOI
- 10.1103/physrevlett.38.980