Abstract

The two-dimensional plasmon of an $n$ inversion layer of (100) $p$-type Si is observed at a fixed wave vector as a function of electron density. The position, width, and strength of the resonance agree with existing theory at electron densities \ensuremath{\gtrsim}${10}^{12}$/${\mathrm{cm}}^{2}$. At lower densities, the resonance position is below the predicted value, implying a substantial increase in the electron mass.

Keywords

PlasmonInversion (geology)Electron densitySiliconPhysicsElectronCondensed matter physicsAtomic physicsResonance (particle physics)Position (finance)Surface plasmon resonanceEffective mass (spring–mass system)Molecular physicsMaterials scienceOpticsQuantum mechanicsOptoelectronics

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Publication Info

Year
1977
Type
article
Volume
38
Issue
17
Pages
980-983
Citations
607
Access
Closed

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Cite This

S. J. Allen, D. C. Tsui, R. A. Logan (1977). Observation of the Two-Dimensional Plasmon in Silicon Inversion Layers. Physical Review Letters , 38 (17) , 980-983. https://doi.org/10.1103/physrevlett.38.980

Identifiers

DOI
10.1103/physrevlett.38.980