Optically pumped lasing of ZnO at room temperature

Abstract

We report the observation of optically pumped lasing in ZnO at room temperature. Thin films of ZnO were grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire substrates. Laser cavities formed by cleaving were found to lase at a threshold excitation intensity of 240 kW cm−2. We believe these results demonstrate the high quality of ZnO epilayers grown by molecular beam epitaxy while clearly demonstrating the viability of ZnO based light emitting devices.

Keywords

Lasing thresholdMolecular beam epitaxySapphireMaterials scienceOptoelectronicsLaserWide-bandgap semiconductorExcitationEpitaxyThin filmZinc compoundsOpticsZincWavelengthNanotechnologyLayer (electronics)

Affiliated Institutions

Tohoku University JP

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Publication Info

Year: 1997
Type: article
Volume: 70
Issue: 17
Pages: 2230-2232
Citations: 2182
Access: Closed

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APA Style

                            
                                
                                    Darren M. Bagnall, 
                                
                                    Y. F. Chen, 
                                
                                    Z. Q. Zhu
                                
                                et al.
                            
                            (1997). 
                            Optically pumped lasing of ZnO at room temperature. 
                            Applied Physics Letters
                            , 70
                            (17)
                            , 2230-2232.
                            https://doi.org/10.1063/1.118824
                        

Identifiers

DOI: 10.1063/1.118824

Data Quality

Data completeness: 77%