Abstract

Photoconductive and photovoltaic properties of Al/PPV/ITO sandwich devices were investigated by measuring steady-state photocurrents resulting from illumination through the Al electrode. A built-in potential (Vbi) was detected at the Al/PPV interface. The voltage dependence of the photocurrent in the vicinity of Vbi was measured at 1 mW/cm2 of incident illumination to give an open-circuit voltage and a short-circuit current of 1.2 V and 6 × 10−7 A/cm2, respectively. The dependences of the short-circuit current on excitation wavelength and illumination intensity are presented and the C-V characteristics of the Al/PPV interface are analyzed. The quantum collection efficiency decreased from 5% to 1% as the intensity of illumination increased from 10−5 to 1 mW/cm2. The photovoltaic conversion power efficiency was about 0.07% for intensities approaching 1 mW/cm2. The Vbi value was accounted for by surface band-bending at the Al/PPV interface.

Keywords

Materials sciencePhotocurrentOptoelectronicsPhotoconductivityPhotovoltaic systemOpen-circuit voltageBand bendingElectrodeEnergy conversion efficiencyQuantum efficiencyExcitationShort circuitWavelengthVoltageChemistryElectrical engineering

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Publication Info

Year
1994
Type
article
Volume
62
Issue
3
Pages
265-271
Citations
210
Access
Closed

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Homer Antoniadis, B. R. Hsieh, M. Abkowitz et al. (1994). Photovoltaic and photoconductive properties of aluminum/poly(p-phenylene vinylene) interfaces. Synthetic Metals , 62 (3) , 265-271. https://doi.org/10.1016/0379-6779(94)90215-1

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DOI
10.1016/0379-6779(94)90215-1