This review covers important advances in recent years in the physics of thin-film ferroelectric oxides, the strongest emphasis being on those aspects particular to ferroelectrics in thin-film form. The authors introduce the current state of development in the application of ferroelectric thin films for electronic devices and discuss the physics relevant for the performance and failure of these devices. Following this the review covers the enormous progress that has been made in the first-principles computational approach to understanding ferroelectrics. The authors then discuss in detail the important role that strain plays in determining the properties of epitaxial thin ferroelectric films. Finally, this review ends with a look at the emerging possibilities for nanoscale ferroelectrics, with particular emphasis on ferroelectrics in nonconventional nanoscale geometries.
The manipulation of magnetic properties by an electric field in magnetoelectric multiferroic materials has driven significant research activity, with the goal of realizing their...
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The lattice parameters of KN${\mathrm{O}}_{3}$ were measured in the temperature region of the ferroelectric transition. The changes in the lattice parameters as the crystal unde...
The Larkin-Khmelnitskii theory of uniaxial ferroelectrics is used to derive further predictions for the critical behavior of ferroelectrics, including "local properties" and tra...
Growth of (0001) facet-dominated, free-standing, piezoelectric zinc oxide (ZnO) nanostructures is challenged by the divergence of the surface energy due to intrinsic polarizatio...
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