Polarization-Selective Plasmon-Enhanced Silicon Quantum-Dot Luminescence

Abstract

The photoluminescence intensity of silicon quantum dots is enhanced in a polarization-selective way by coupling to elongated Ag nanoparticles. The observed polarization dependence provides direct proof that the PL enhancement is due to electromagnetic coupling of the silicon quantum-dot emission dipoles with dipolar plasmon modes of the Ag nanoparticles. The polarization selectivity demonstrates the potential of engineered plasmonic nanostructures to optimize and tune the performance of light sources in a way that goes beyond solely enhancing the emission and absorption rates.

Keywords

Quantum dotPhotoluminescencePlasmonMaterials sciencePolarization (electrochemistry)OptoelectronicsSiliconLuminescenceNanoparticleNanostructureDipoleNanotechnologyChemistryPhysical chemistry

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Publication Info

Year: 2006
Type: article
Volume: 6
Issue: 11
Pages: 2622-2625
Citations: 215
Access: Closed

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APA Style

                            
                                
                                    Hans Mertens, 
                                
                                    Julie S. Biteen, 
                                
                                    Harry A. Atwater
                                
                                et al.
                            
                            (2006). 
                            Polarization-Selective Plasmon-Enhanced Silicon Quantum-Dot Luminescence. 
                            Nano Letters
                            , 6
                            (11)
                            , 2622-2625.
                            https://doi.org/10.1021/nl061494m
                        

Identifiers

DOI: 10.1021/nl061494m