Properties of the electron-hole plasma in II–VI semiconductors

1992 Journal of Crystal Growth 31 citations

Keywords

SemiconductorPlasmaElectron holeElectronCondensed matter physicsSuperlatticeBand gapMaterials scienceChemistryPhysicsOptoelectronicsQuantum mechanics

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Year
1992
Type
article
Volume
117
Issue
1-4
Pages
753-757
Citations
31
Access
Closed

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C. Klingshirn (1992). Properties of the electron-hole plasma in II–VI semiconductors. Journal of Crystal Growth , 117 (1-4) , 753-757. https://doi.org/10.1016/0022-0248(92)90850-i

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DOI
10.1016/0022-0248(92)90850-i