Quantum dot field effect transistors

Abstract

Solution processed colloidal semiconductor quantum dots offer a high potential for decreasing costs and expanding versatility of many electronic and optoelectronic devices. Initially used as a research tool to study charge carrier mobilities in closely packed quantum dot thin films, field effect transistors with quantum dots as the active layer have recently experienced a breakthrough in performance (achievement of mobilities higher than 30 cm2 V−1 s−1) as a result of a proper choice of surface ligands and/or improved chemical treatment of the nanoparticle films during device processing. Here we review these innovative developments and the continuing work that may soon lead to commercial grade electronic components.

Keywords

Quantum dotTransistorNanotechnologyMaterials scienceSemiconductorField-effect transistorOptoelectronicsField (mathematics)Charge (physics)Charge carrierEngineering physicsNanoparticleElectronicsElectrical engineeringPhysicsEngineeringQuantum mechanics

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Publication Info

Year: 2013
Type: article
Volume: 16
Issue: 9
Pages: 312-325
Citations: 223
Access: Closed

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APA Style

                            
                                
                                    Frederik Hetsch, 
                                
                                    Ni Zhao, 
                                
                                    Stephen V. Kershaw
                                
                                et al.
                            
                            (2013). 
                            Quantum dot field effect transistors. 
                            Materials Today
                            , 16
                            (9)
                            , 312-325.
                            https://doi.org/10.1016/j.mattod.2013.08.011
                        

Identifiers

DOI: 10.1016/j.mattod.2013.08.011