Abstract
We have succeeded in fabricating the mostly crystallized Si:H materials having a wide optical band gap of up to 2.4 eV by means of a reactive sputtering technique with a low substrate temperature of \ensuremath{\sim}100 K. The structural analysis showed that the materials consist of small crystalline silicon particles surrounded by hydrogen atoms, whose diameters are 20--30 A\r{}. The widening of the optical band gap can be explained by a three-dimensional quantum-well effect in the small particles.
Keywords
Materials scienceMicrocrystallineBand gapSputteringSubstrate (aquarium)SiliconHydrogenMicrocrystalline siliconPotential wellQuantum dotOptoelectronicsCondensed matter physicsCrystalline siliconThin filmNanotechnologyCrystallographyPhysicsChemistry
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Publication Info
- Year
- 1988
- Type
- article
- Volume
- 38
- Issue
- 8
- Pages
- 5726-5729
- Citations
- 451
- Access
- Closed
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Cite This
Shoji Furukawa,
Tatsuro Miyasato
(1988).
Quantum size effects on the optical band gap of microcrystalline Si:H.
Physical review. B, Condensed matter
, 38
(8)
, 5726-5729.
https://doi.org/10.1103/physrevb.38.5726
Identifiers
- DOI
- 10.1103/physrevb.38.5726