Quantum Spin Hall Effect in Graphene

Abstract

We study the effects of spin orbit interactions on the low energy electronic structure of a single plane of graphene. We find that in an experimentally accessible low temperature regime the symmetry allowed spin orbit potential converts graphene from an ideal two-dimensional semimetallic state to a quantum spin Hall insulator. This novel electronic state of matter is gapped in the bulk and supports the transport of spin and charge in gapless edge states that propagate at the sample boundaries. The edge states are nonchiral, but they are insensitive to disorder because their directionality is correlated with spin. The spin and charge conductances in these edge states are calculated and the effects of temperature, chemical potential, Rashba coupling, disorder, and symmetry breaking fields are discussed.

Keywords

GrapheneCondensed matter physicsQuantum Hall effectSpin (aerodynamics)PhysicsQuantum spin Hall effectSpin Hall effectQuantum mechanicsElectronSpin polarization

Affiliated Institutions

University of Pennsylvania US

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Publication Info

Year: 2005
Type: article
Volume: 95
Issue: 22
Pages: 226801-226801
Citations: 7834
Access: Closed

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APA Style

                            
                                    C. L. Kane, 
                                
                                    E. J. Melé
                                
                            (2005). 
                            Quantum Spin Hall Effect in Graphene. 
                            Physical Review Letters
                            , 95
                            (22)
                            , 226801-226801.
                            https://doi.org/10.1103/physrevlett.95.226801

Identifiers

DOI: 10.1103/physrevlett.95.226801