Raman fingerprint of charged impurities in graphene

Abstract

We report strong variations in the Raman spectra for different single-layer graphene samples obtained by micromechanical cleavage. This reveals the presence of excess charges, even in the absence of intentional doping. Doping concentrations up to ∼1013cm−2 are estimated from the G peak shift and width and the variation of both position and relative intensity of the second order 2D peak. Asymmetric G peaks indicate charge inhomogeneity on a scale of less than 1μm.

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Publication Info

Year: 2007
Type: article
Volume: 91
Issue: 23
Citations: 843
Access: Closed

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APA Style

                            
                                
                                    C. Casiraghi, 
                                
                                    S. Pisana, 
                                
                                    K. S. Novoselov
                                
                                et al.
                            
                            (2007). 
                            Raman fingerprint of charged impurities in graphene. 
                            Applied Physics Letters
                            , 91
                            (23)
                            .
                            https://doi.org/10.1063/1.2818692
                        

Identifiers

DOI: 10.1063/1.2818692