Abstract
Quantization of the Hall resistance of the two-dimensional electron gas in GaAs-AlxGa1−xAs heterostructures is observed at 4.2 K and at magnetic fields as low as 4.2 T. This demonstrates its practical use as a primary resistance standard.
Keywords
HeterojunctionQuantization (signal processing)Condensed matter physicsHall effectMaterials scienceQuantum Hall effectMagnetic fieldPhysicsQuantum mechanicsMathematics
Related Publications
Odd-momentum pairing and superconductivity in vertical graphene heterostructures
Vertical graphene heterostructures made up of graphene layers separated by BN\nspacers allow for novel ways of tuning the interactions between electrons. We\nstudy the possibili...
Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-based Nanoelectronics
We have produced ultrathin epitaxial graphite films which show remarkable 2D\nelectron gas (2DEG) behavior. The films, composed of typically 3 graphene\nsheets, were grown by th...
Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
Tunnel Barriers for Graphene Transistors Transistor operation for integrated circuits not only requires that the gate material has high-charge carrier mobility, but that there i...
Magnetic, transport, and optical properties of monolayer copper oxides
The authors review the results of a wide variety of experiments on materials such as ${\mathrm{La}}_{2}{\mathrm{CuO}}_{4}$ and ${\mathrm{Nd}}_{2}{\mathrm{CuO}}_{4}$ that contain...
Publication Info
- Year
- 1981
- Type
- article
- Volume
- 38
- Issue
- 7
- Pages
- 550-552
- Citations
- 219
- Access
- Closed
External Links
Social Impact
Altmetric
PlumX Metrics
Social media, news, blog, policy document mentions
Citation Metrics
219
OpenAlex
Cite This
D. C. Tsui,
A. C. Gossard
(1981).
Resistance standard using quantization of the Hall resistance of GaAs-Al<i>x</i>Ga1−<i>x</i>As heterostructures.
Applied Physics Letters
, 38
(7)
, 550-552.
https://doi.org/10.1063/1.92408
Identifiers
- DOI
- 10.1063/1.92408