Abstract
Schottky barrier avalanche photodiodes have been fabricated in Ga1−xAlxAs1−ySby. The devices are planar and have semitransparent Au barriers. In addition, these detectors exhibit uniform photoresponse and dark current densities of ∼2.7×10−3 A/cm3 at the voltages where avalanche gains of 2 to 4 have been measured. This is the first report of avalanche gain in such a structure in the Ga1−xAlxAs1−ySby alloy system.
Keywords
Schottky barrierPhotodetectorAvalanche photodiodeDark currentOptoelectronicsSchottky diodePlanarAvalanche breakdownMaterials scienceAlloyPhotodiodeDetectorMetal–semiconductor junctionBreakdown voltageVoltageOpticsPhysicsDiodeMetallurgy
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Publication Info
- Year
- 1980
- Type
- article
- Volume
- 37
- Issue
- 6
- Pages
- 550-551
- Citations
- 25
- Access
- Closed
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Cite This
R. Chin,
H. D. Law,
K. Nakano
et al.
(1980).
Schottky barrier Ga1−<i>x</i>Al<i>x</i>As1−<i>y</i>Sb<i>y</i> alloy avalanche photodetectors.
Applied Physics Letters
, 37
(6)
, 550-551.
https://doi.org/10.1063/1.91982
Identifiers
- DOI
- 10.1063/1.91982