Abstract
The development of the self‐organized growth of pentacence thin films on the channel region of a thin‐film transistor (TFT) using surface modifications induced by organic vapor phase deposition is reported (see Figure). A bottom‐contact TFT on plastic using an organic gate insulator of cross‐linked poly‐(4‐vinylphenol) exhibited a field‐effect mobility of 1.2 cm 2 /Vs and an on/off current ratio of ∼ 10 7 .
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Publication Info
- Year
- 2004
- Type
- article
- Volume
- 16
- Issue
- 8
- Pages
- 732-736
- Citations
- 121
- Access
- Closed
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Identifiers
- DOI
- 10.1002/adma.200306244