Abstract

We report a technique for investigating nucleation and growth confined to nanometer scale surfaces. Lithographic and etching processes were used to create arrays of 100 and 150 nm holes through a thin SiO2 layer onto Si(100). Ge dots were nucleated and grown to a few nanometers in diameter within the patterned wells. Transmission electron and atomic force microscopic analyses revealed the presence of 0−1 Ge quantum dots in each of the 100 nm wells and 2−4 dots in the 150 nm wells. For the latter case, size−distance correlations indicated the effective radius of the diffusion field around a growing Ge particle was much larger than for growth on an infinite surface.

Keywords

Quantum dotNucleationNanometreMaterials scienceNanotechnologyEtching (microfabrication)RADIUSFabricationDiffusionLithographyGermaniumTransmission electron microscopyLayer (electronics)OptoelectronicsChemistrySiliconPhysicsComposite material

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Publication Info

Year
1996
Type
article
Volume
100
Issue
8
Pages
3144-3149
Citations
33
Access
Closed

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Cite This

James R. Heath, R. Stanley Williams, J. J. Shiang et al. (1996). Spatially Confined Chemistry:  Fabrication of Ge Quantum Dot Arrays. The Journal of Physical Chemistry , 100 (8) , 3144-3149. https://doi.org/10.1021/jp951903v

Identifiers

DOI
10.1021/jp951903v