Keywords
Vacancy defectIndiumStoichiometryPhotoluminescenceMaterials scienceSulfurCrystallographic defectCopperIonizationChemical physicsCrystallographyChemistryPhysical chemistryOptoelectronicsIonMetallurgy
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Publication Info
- Year
- 1989
- Type
- article
- Volume
- 50
- Issue
- 12
- Pages
- 1297-1305
- Citations
- 150
- Access
- Closed
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Cite This
H.Y. Ueng,
H. L. Hwang
(1989).
The defect structure of CuInS2. part I: Intrinsic defects.
Journal of Physics and Chemistry of Solids
, 50
(12)
, 1297-1305.
https://doi.org/10.1016/0022-3697(89)90403-4
Identifiers
- DOI
- 10.1016/0022-3697(89)90403-4