The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene

Martin Kalbáč; Alfonso Reina-Cecco; Hootan Farhat; Jing Kong; Ladislav Kavan; M. S. Dresselhaus

doi:10.1021/nn1010914

Abstract

Electrochemical charging has been applied to study the influence of doping on the intensity of the various Raman features observed in chemical vapor-deposition-grown graphene. Three different laser excitation energies have been used to probe the influence of the excitation energy on the behavior of both the G and G' modes regarding their dependence on doping. The intensities of both the G and G' modes exhibit a significant but different dependence on doping. While the intensity of the G' band monotonically decreases with increasing magnitude of the electrode potential (positive or negative), for the G band a more complex behavior has been found. The striking feature is an increase of the Raman intensity of the G mode at a high value of the positive electrode potential. Furthermore, the observed increase of the Raman intensity of the G mode is found to be a function of laser excitation energy.

Keywords

Raman spectroscopyGrapheneMaterials scienceDopingElectrodeChemical vapor depositionExcitationRaman scatteringIntensity (physics)Analytical Chemistry (journal)G bandAtomic physicsMolecular physicsOptoelectronicsChemistryNanotechnologyOpticsPhysical chemistryPhysics

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Publication Info

Year: 2010
Type: article
Volume: 4
Issue: 10
Pages: 6055-6063
Citations: 269
Access: Closed

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APA Style

                            
                                
                                    Martin Kalbáč, 
                                
                                    Alfonso Reina-Cecco, 
                                
                                    Hootan Farhat
                                
                                et al.
                            
                            (2010). 
                            The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene. 
                            ACS Nano
                            , 4
                            (10)
                            , 6055-6063.
                            https://doi.org/10.1021/nn1010914
                        

Identifiers

DOI: 10.1021/nn1010914