Abstract
The mostly crystallized Si:H having a wide optical band gap and showing a visible photoluminescence at room temperature, has been fabricated by means of a planar magnetron rf sputtering technique in hydrogen gas onto a low temperature (about 100 K) substrate. The materials consist of very small crystalline silicon particles (average diameters: 2–5 nm) surrounded by =SiH 2 groups. The observed macroscopic physical properties are explained by the three-dimensional quantum size effects in the ultrafine silicon particles.
Keywords
SiliconMaterials scienceSubstrate (aquarium)PhotoluminescenceSputter depositionPlanarBand gapHydrogenSputteringOptoelectronicsQuantum dotMineralogyNanotechnologyThin filmChemistry
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Publication Info
- Year
- 1988
- Type
- article
- Volume
- 27
- Issue
- 11A
- Pages
- L2207-L2207
- Citations
- 174
- Access
- Closed
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Cite This
Shunsuke Furukawa,
Tatsuro Miyasato
(1988).
Three-Dimensional Quantum Well Effects in Ultrafine Silicon Particles.
Japanese Journal of Applied Physics
, 27
(11A)
, L2207-L2207.
https://doi.org/10.1143/jjap.27.l2207
Identifiers
- DOI
- 10.1143/jjap.27.l2207