Abstract

2014/2015 represents the tenth anniversary of modern graphene research. Over this decade, graphene has proven to be attractive for thin-film transistors owing to its remarkable electronic, optical, mechanical and thermal properties. Even its major drawback--zero bandgap--has resulted in something positive: a resurgence of interest in two-dimensional semiconductors, such as dichalcogenides and buckled nanomaterials with sizeable bandgaps. With the discovery of hexagonal boron nitride as an ideal dielectric, the materials are now in place to advance integrated flexible nanoelectronics, which uniquely take advantage of the unmatched portfolio of properties of two-dimensional crystals, beyond the capability of conventional thin films for ubiquitous flexible systems.

Keywords

NanoelectronicsNanotechnologyGrapheneMaterials scienceEngineering physicsBoron nitrideNanomaterialsSemiconductorOptoelectronicsPhysics

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Publication Info

Year
2014
Type
article
Volume
5
Issue
1
Pages
5678-5678
Citations
1836
Access
Closed

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1836
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Cite This

Deji Akinwande, Nicholas Petrone, James Hone (2014). Two-dimensional flexible nanoelectronics. Nature Communications , 5 (1) , 5678-5678. https://doi.org/10.1038/ncomms6678

Identifiers

DOI
10.1038/ncomms6678
PMID
25517105

Data Quality

Data completeness: 81%