Abstract

High-quality, c-oriented ZnO epitaxial films have been grown on the a surface using molecular-beam epitaxy. The use of a-oriented sapphire eliminates rotational domains and related structural defects which have limited the use of ZnO in electronic applications. The ZnO epitaxial layers are uniquely oriented with the ZnO/sapphire orientational relationship [0001]‖[112̄0] and 〈112̄0〉‖[0001]. This unique orientation is a consequence of the anisotropy of the a-sapphire surface in conjunction with a strong correlation along a single direction leading to the term uniaxial locked epitaxy. High-resolution x-ray diffraction measurements show an increase in x-ray lateral coherence length from several tens of nanometers to >0.7 μm for growth of c-oriented ZnO on the a surface as opposed to the c surface of sapphire.

Keywords

SapphireEpitaxyMaterials scienceMolecular beam epitaxyOptoelectronicsDiffractionAnisotropyCrystallographyOpticsNanotechnologyLaserChemistryPhysics

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Year
2000
Type
article
Volume
77
Issue
12
Pages
1801-1803
Citations
195
Access
Closed

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Paul Fons, K. Iwata, A. Yamada et al. (2000). Uniaxial locked epitaxy of ZnO on the a face of sapphire. Applied Physics Letters , 77 (12) , 1801-1803. https://doi.org/10.1063/1.1311603

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DOI
10.1063/1.1311603