Unusually Low Surface-Recombination Velocity on Silicon and Germanium Surfaces

Abstract

We have found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive. With preparation in this manner, the surface-recombination velocity on Si111> is only 0.25 cm/sec, which is the lowest value ever reported for any semiconductor. Multiple-internal-reflection infrared spectroscopy shows that the surface appears to be covered by covalent Si-H bonds, leaving virtually no surface dangling bonds to act as recombinatiuon centers. These results have implications for the ultimate efficiency of silicon solar cells.

Keywords

Dangling bondSiliconGermaniumMaterials scienceSemiconductorCovalent bondRecombinationSurface (topology)InfraredAtomic physicsOptoelectronicsChemical physicsOpticsChemistryPhysics

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Core Competence US

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Publication Info

Year: 1986
Type: article
Volume: 57
Issue: 2
Pages: 249-252
Citations: 950
Access: Closed

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APA Style

                            
                                
                                    Eli Yablonovitch, 
                                
                                    David L. Allara, 
                                
                                    Che-Chen Chang
                                
                                et al.
                            
                            (1986). 
                            Unusually Low Surface-Recombination Velocity on Silicon and Germanium Surfaces. 
                            Physical Review Letters
                            , 57
                            (2)
                            , 249-252.
                            https://doi.org/10.1103/physrevlett.57.249
                        

Identifiers

DOI: 10.1103/physrevlett.57.249