Abstract
When the Fermi level is pinned in the energy gap between two Landau levels of two-dimensional electrons, the response of electrons in the completely filled levels to an electric field is a dissipation-free Hall current perpendicular to the field. Our low-temperature measurements on GaAs-${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ heterojunctions give an upper limit for the resistance along the current path of ${\ensuremath{\rho}}_{\mathrm{xx}}\ensuremath{\lesssim}5\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}7}$ \ensuremath{\Omega}/\ensuremath{\square} which corresponds to a three-dimensional resistivity of $\ensuremath{\rho}<~5\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}13}$ \ensuremath{\Omega} cm. This resistivity is more than one order of magnitude lower than the resistivity of any nonsuperconducting material.
Keywords
Condensed matter physicsPhysicsElectrical resistivity and conductivityOmegaElectronLandau quantizationMagnetic fieldOrder (exchange)Mean free pathElectric fieldEnergy (signal processing)Quantum mechanics
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Publication Info
- Year
- 1982
- Type
- article
- Volume
- 25
- Issue
- 2
- Pages
- 1405-1407
- Citations
- 129
- Access
- Closed
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Cite This
D. C. Tsui,
H. L. Störmer,
A. C. Gossard
(1982).
Zero-resistance state of two-dimensional electrons in a quantizing magnetic field.
Physical review. B, Condensed matter
, 25
(2)
, 1405-1407.
https://doi.org/10.1103/physrevb.25.1405
Identifiers
- DOI
- 10.1103/physrevb.25.1405