100-GHz Transistors from Wafer-Scale Epitaxial Graphene
The maximum switching frequency of these devices exceeds that of silicon transistors with similar gate-electrode dimensions.
The maximum switching frequency of these devices exceeds that of silicon transistors with similar gate-electrode dimensions.
A picosecond pump-probe technique is used to measure the room-temperature thermal conductivity κ and longitudinal sound velocity cl of amorphous diamond (a-D) and diamondlike ca...
h-index: Number of publications with at least h citations each.