100-GHz Transistors from Wafer-Scale Epitaxial Graphene

Yu-Ming Lin; Christos Dimitrakopoulos; K.A. Jenkins; Damon B. Farmer; Hsin‐Ying Chiu; A. Grill; Phaedon Avouris

doi:10.1126/science.1184289

Abstract

The maximum switching frequency of these devices exceeds that of silicon transistors with similar gate-electrode dimensions.

Keywords

WaferGrapheneTransistorOptoelectronicsEpitaxyMaterials scienceWafer-scale integrationScale (ratio)NanotechnologyElectrical engineeringPhysicsEngineeringVoltage

Affiliated Institutions

IBM (United States) US

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Publication Info

Year: 2010
Type: article
Volume: 327
Issue: 5966
Pages: 662-662
Citations: 2480
Access: Closed

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APA Style

                            
                                
                                    Yu-Ming Lin, 
                                
                                    Christos Dimitrakopoulos, 
                                
                                    K.A. Jenkins
                                
                                et al.
                            
                            (2010). 
                            100-GHz Transistors from Wafer-Scale Epitaxial Graphene. 
                            Science
                            , 327
                            (5966)
                            , 662-662.
                            https://doi.org/10.1126/science.1184289
                        

Identifiers

DOI: 10.1126/science.1184289